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Application of the Scattering Matrix Method for Calculation of Impurity States in Semiconductor Structures

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Abstract

The scattering matrix method is adapted for calculation of energy levels and charge carrier wavefunctions near impurity-defect centers. The possibility of application of this method for multiband models is exemplified by the Luttinger Hamiltonian with a Coulomb acceptor with the spherical symmetry approach. The obtained values of energy of discrete levels are in good agreement with the results of calculations performed by other methods.

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Funding

This work was supported by the Ministry of Science and Higher Education of Russian Federation, grant project no. 075-15-2020-797 (13.1902.21.0024).

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    S. V. Morozov & M. S. Zholudev

  2. National Research Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    S. V. Morozov & M. S. Zholudev

Authors
  1. S. V. Morozov
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  2. M. S. Zholudev
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Correspondence to S. V. Morozov.

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Translated by G. Levina

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Morozov, S.V., Zholudev, M.S. Application of the Scattering Matrix Method for Calculation of Impurity States in Semiconductor Structures. Tech. Phys. Lett. 47, 360–363 (2021). https://doi.org/10.1134/S1063785021040131

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  • DOI: https://doi.org/10.1134/S1063785021040131

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