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Theory of charge-carrier scattering on ionized impurities in anisotropic semiconductors of p-Ge type

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Abstract

The method developed in [10] is used as the basis for a theory of chargecarrier scattering on ionized impurities in anisotropic semiconductors of type p-Ge. A general expression is obtained for the nonequilibrium hole distribution function, and is used to calculate the hole mobility in p-Ge at temperatures 10°K≤T≤70°K. The complexity of the band structure and the specific features of the scattering mechanism are taken into account. The results obtained are in good agreement with experimental data.

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Authors and Affiliations

  1. Chernovitsy State University, USSR

    I. V. Gutsul, V. I. Marusyak, V. M. Nitsovich & T. O. Tsarik

Authors
  1. I. V. Gutsul
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  2. V. I. Marusyak
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  3. V. M. Nitsovich
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  4. T. O. Tsarik
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 117–123, January, 1978.

The computer calculations were carried out by M. V. Ostapovich to whom thanks are due.

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Gutsul, I.V., Marusyak, V.I., Nitsovich, V.M. et al. Theory of charge-carrier scattering on ionized impurities in anisotropic semiconductors of p-Ge type. Soviet Physics Journal 21, 99–104 (1978). https://doi.org/10.1007/BF00896305

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  • DOI: https://doi.org/10.1007/BF00896305

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