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Electron microscopy of the early stages of growth of zinc chalcogenide films on semiconductor substrates

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Abstract

Electron microscopy has been used to examine the nucleation and growth of the transition layer for films of ZnS, ZnSe, and ZnTe on Ge and GaAs substrates. There are distinct temperature ranges in which physical condensation and chemical interaction occur. The film tends to recrystallize during growth.

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Authors and Affiliations

  1. Lensovet Technological Institute, Leningrad

    K. K. Murav'eva, I. P. Kalinkin, F. I. Kozhokar', V. A. Ivanov, G. É. Frank-Kamenetskaya & R. V. Shadrina

Authors
  1. K. K. Murav'eva
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  2. I. P. Kalinkin
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  3. F. I. Kozhokar'
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  4. V. A. Ivanov
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  5. G. É. Frank-Kamenetskaya
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  6. R. V. Shadrina
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 87–91, January, 1978.

We are indebted to Yu. G. Saksonov for performing the electron-probe microanalyses of certain specimens.

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Murav'eva, K.K., Kalinkin, I.P., Kozhokar', F.I. et al. Electron microscopy of the early stages of growth of zinc chalcogenide films on semiconductor substrates. Soviet Physics Journal 21, 71–76 (1978). https://doi.org/10.1007/BF00896299

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  • DOI: https://doi.org/10.1007/BF00896299

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