Abstract
Textured ZnO films obtained on amorphous substrates using the ion-beam sputtering method are studied. X-ray diffraction and atomic-force microscopy methods show that the resulting films have a polycrystalline structure immediately after deposition. It is established that further annealing of the samples in the temperature range from 200°C to 500°C results in recrystallization, which leads to changes in the grain size and surface roughness. A dependence of the crystallization intensity on the deposition conditions is found, which is related to the number of defects in the unannealed films. In films with an initially more perfect structure, heat treatment at 500°C results in the growth of grains by more than 2 times and a decrease in the roughness by ∼40%.
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Kostishin, V.G., Mironovich, A.Y., Timofeev, A.V. et al. Structural Features of Textured Zinc-Oxide Films Obtained by the Ion-Beam Sputtering Method. Semiconductors 55, 308–314 (2021). https://doi.org/10.1134/S106378262103012X
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DOI: https://doi.org/10.1134/S106378262103012X