Abstract
The structure and thickness of zinc and cadmium chalcogenide semiconductor films are studied by X-ray radiography. The film thickness is shown to be comparable with the half-value layer depth. The electrical conductivity of the films increases upon heating in the hydrogen atmosphere and decreases upon heating in carbon oxide. The opposite trend is observed in the ratio between the electrical conductivity and band gap of the initial and oxidized film surfaces.
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Original Russian Text © V.V. Dan’shina, L.F. Kalistratova, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 1, pp. 172–175.
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Dan’shina, V.V., Kalistratova, L.F. Comparative analysis of the thickness and electrical conductivity of thin chalcogenide semiconductor films. Phys. Solid State 59, 180–183 (2017). https://doi.org/10.1134/S106378341701005X
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DOI: https://doi.org/10.1134/S106378341701005X