Abstract
A study has been made of the influence of the inlet pressure of arsine on the growth rate and structure of the growth surface of epitaxial GaAs layers in the GaCl-AsH3-H2 system. We show that at low arsenic concentrations in the vapor phase the polarity of the ends of the steps has an effect on the growth of GaAs layers, changing the shape of V(φ) in the vicinity of the (001) face. The mechanism of the effect and the condition under which it appears are discussed. Data are given on the relief of the growth surfaces and the density of the microdefects is shown to be maximum on (001), decreasing rapidly with deviation from that face.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 81–86, September, 1988.
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Aleksandrova, G.A., Ivonin, I.V., Lavrent'eva, L.G. et al. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B. Soviet Physics Journal 31, 759–763 (1988). https://doi.org/10.1007/BF00895989
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DOI: https://doi.org/10.1007/BF00895989