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Current carriers in a Hubbard antiferromagnet

  • Physics of Semiconductors and Dielectrics
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Soviet Physics Journal Aims and scope

Abstract

The possible types of single-particle excitations of a Hubbard antiferromagnetic semiconductor are investigated, starting from the self-consistent-field approximation. Unlike the preceding studies, the excitation is described in the general case by a superposition of states of a freely propagating electron, an uncoupled electron-spin wave pair, and a coupled electron-spin wave pair. It is shown in this case that in a finite interval of problem parameter values there exists an isolated low-lying band, corresponding to low-mobility excitations with substantial large-radius impurity quasioscillators. It is also shown that in the strong interaction limit the excitation bandwidth remains finite due to the contribution of bound states.

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Authors and Affiliations

  1. Chelyabinskii Pedagogical Institute, USSR

    B. M. Slepchenko

Authors
  1. B. M. Slepchenko
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 50–56, September, 1988.

The author is grateful to M. I. Katsnel'son and V. Yu. Irkhin for the statement of the problem and for useful discussions, as well as M. S. Svirskii for discussing the results of this study.

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Slepchenko, B.M. Current carriers in a Hubbard antiferromagnet. Soviet Physics Journal 31, 732–736 (1988). https://doi.org/10.1007/BF00895982

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  • DOI: https://doi.org/10.1007/BF00895982

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