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Effects of current pulses on dislocation mobility in Zn at 77 K

  • Solid State Physics
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Abstract

Selective etching at 77 K has been applied to the mobilities of pyramidal dislocations in the 11¯22<11¯23> slip system for pure Zn single crystals in the region of thermally activated motion in order to establish how the pulses affect the plasticity. The activation and statistical parameters in the dislocation motion have been related to the current density and loading on the basis of the ponderomotor forces, the thermal response and the skin effects, as well as the electron-dislocation interaction. The current effect is related to reduced probability of overcoming Peierls barriers.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 35–39, March, 1990.

We are indebted to V. F. Kurilov for a discussion and critical comments, and to F. F. Lavrent'ev for providing the Zn single crystals.

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Gromov, V.E., Gurevich, L.I. Effects of current pulses on dislocation mobility in Zn at 77 K. Soviet Physics Journal 33, 231–234 (1990). https://doi.org/10.1007/BF00895958

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  • DOI: https://doi.org/10.1007/BF00895958

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