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Effect of position of fermi level on solubility of donor impurities in InAs

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Abstract

Expressions for the solubility of charged impurities in semiconductors in relation to the composition of the liquid phase and temperature are obtained. Calculations of the solubility of donors in InAs are compared with obtained experimental data.

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Authors and Affiliations

  1. A. A. Zhdanov Irkutsk State University, USSR

    V. N. Morozov & V. G. Chernov

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  1. V. N. Morozov
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  2. V. G. Chernov
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Translated from Izvestiya Vysshikh Uchebnikh Zavedenii, Fizika No. 6, pp. 31–36, June, 1981.

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Morozov, V.N., Chernov, V.G. Effect of position of fermi level on solubility of donor impurities in InAs. Soviet Physics Journal 24, 506–510 (1981). https://doi.org/10.1007/BF00892945

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  • DOI: https://doi.org/10.1007/BF00892945

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