Abstract
This paper evaluates corrections to the static electrical conductivity of a nondegenerate semiconductor, doped with dopants of one type, taking into account the interaction of the charge carriers both with a random field and with lattice oscillations. The results obtained may be generated to the case of an arbitrary random field.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 7, pp. 14–21, July, 1974.
The author wishes to express his profound indebtedness to V. L. Bonch-Bruevich for proposing this topic.
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Fedirko, V.A. Static electrical conductivity of a doped semiconductor. Soviet Physics Journal 16, 899–905 (1973). https://doi.org/10.1007/BF00891499
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DOI: https://doi.org/10.1007/BF00891499