Abstract
AtT=79 K illumination effects with visible and UV light on the drain current were studied forn-channel enhancement-type MOS transistors. The results show that the response of photoelectric measurements is due to electron excitation from oxide states into the silicon surface layer (positive changes of drain current). The oxide states lying near the bottom of the silicon dioxide conduction band are distributed in energy. Oxide states having captured a hole can be discharged by electrons excited from the silicon conduction or valence band (negative changes of drain current) in combination with a tunneling process.
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Kreutz, E.W. Photoelectric spectroscopy of oxide states with MOS structures atT=79 K. Appl. Phys. 1, 161–166 (1973). https://doi.org/10.1007/BF00889547
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DOI: https://doi.org/10.1007/BF00889547