Abstract
The processes of changing the charge state of metal–oxide–semiconductor (MOS) structures that contain a multilayer gate dielectric on the basis of a thermal SiO2 film doped with phosphorus under the influence of high-field electron injection are investigated. It is determined that a negative charge accumulating in a thin phosphosilicate glass (PSG) film of MOS structures containing a SiO2–PSG two-layer gate dielectric under high-field tunneling injection of electrons can be used for the correction of the threshold voltage, for the enhancement of the charge stability, and for an increase in the breakdown voltage of devices with MOS structure. It is shown that the density of electron traps increases with an increase in the thickness of the PSG film containing them, while their capture cross section remains unchanged. The method for the modification of the electrophysical characteristics of MOS structures by the high-field tunneling injection of electrons into a dielectric under a controlled current load is proposed. The method allows one to control changes in the parameters of MOS structures directly in the process of their modification. It is established that a MOS structure with a high thermal field stability can be obtained by its annealing at 200°C after the modification of its charge state by the electron injection.
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Strong, A.W., Wu, E.Y., Vollertsen, R., Sune, J., Rosa, G.L., Rauch, S.E., and Sullivan, T.D., Reliability Wearout Mechanisms in Advanced CMOS Technologies, WileyIEEE, 2009.
Balk, P. and Eldridge, J.M., Phosphosilicate glass stabilization of FET devices, Proc. of the IEEE, 1969, vol. 57, pp. 1558–1563.
Bondarenko, G.G., Andreev, V.V., Maslovsky, V.M., Stolyarov, A.A., and Drach, V.E., Plasma and injection modification of gate dielectric in MOS structures, Thin Solid Films, 2003, vol. 427, pp. 377–380.
Sharma, Y.K., Ahyi, A.C., Issacs-Smith, T., Shen, X., Pantelides, S.T., Zhu, X., and Feldman, L.C., Phosphorous passivation of the SiO2/4H–SiC interface, Solid-State Electron., 2012, vol. 68, pp. 103–107.
Sharma, Y.K., Xu, Yi., Jennings, M.R., Fisher, C., Mawby, P., Feldman, L.C., and Williams, J.R., Improved stability of 4H SiC–MOS devices after phosphorous passivation with etching process, IJFPS, 2014, vol. 4, no. 2, pp. 37–42.
Bondarenko, G.G., Andreev, V.V., Stolyarov, A.A., and Tkachenko, A.L., Modification of metal-oxide-semiconductor devices by electron injection in high-fields, Vacuum, 2002, vol. 67, pp. 507–511.
Levin, M.N., Tatarintsev, A.V., Makarenko, V.A., and Gitlin, V.R., X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling, Russ. Microelectr., 2006, vol. 35, no. 5, pp. 329–336. http://link.springer.com/article/10.1134/S1063739706050088
Andreev, V.V., Baryshev, V.G., Bondarenko, G.G., Stolyarov, A.A., and Shakhnov, V.A., Charge degradation of MIS structures with phosphosilicate glass-passivated thermal silicon oxide at high-field tunnel injection, Russ. Microelectron., 1997, vol. 26, no. 6, pp. 378–383.
Andreev, V.V., Bondarenko, G.G., Maslovsky, V.M., Stolyarov, A.A., and Andreev, D.V., Modification and reduction of defects in thin gate dielectric of MIS devices by injection-thermal and irradiation treatments, Phys. Status Solidi, 2015, vol. 12, nos. 1–2, pp. 126–130.
Lombardo, S., Stathis, J.H., Linder, P., Pey, K.L., Palumbo, F., and Tung, C.H., Dielectric breakdown mechanisms in gate oxides, J. Appl. Phys., 2005, vol. 98, no. 12, p. 121301.
Andreev, V.V., Bondarenko, G.G., Maslovsky, V.M., and Stolyarov, A.A., Multilevel current stress technique for investigation thin oxide layers of MOS structures, IOP Conf. Ser.: Mater. Sci. Eng., 2012, vol. 41, p. 012017.
Andreev, V.V., Bondarenko, G.G., Maslovsky, V.M., and Stolyarov, A.A., Modification of gate dielectric in MOS devices by injection-thermal and plasma treatments, Acta Phys. Pol. A, 2014, vol. 125, no. 6, pp. 1371–1373.
Bondarenko, G.G., Andreev, V.V., Drach, V.E., Loskutov, S.A., and Stolyarov, M.A., Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields, Thin Solid Films, 2006, vol. 515, pp. 670–673.
Krasnikov, G.Y. and Zaitsev, N.A., Sistema kremniidioksid kremniya sybmikronnykh SBIS (System SiliconSilicon Dioxide of Submicron VLSI Circuits), Moscow: Technosphera, 2003.
Andreev, V.V., Bondarenko, G.G., Stolyarov, A.A., and Akhmelkin, D.M., Modification of MOS dielectric films by injection-thermal treatment, Inorg. Mater.: Appl. Res., 2015, vol. 6, no. 2, pp. 128–132. http://link.springer.com/article/10.1134/S2075113315020021
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Original Russian Text © D.V. Andreev, G.G. Bondarenko, A.A. Stolyarov, 2015, published in Perspektivnye Materialy, 2015, No. 11, pp. 19–25.
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Andreev, D.V., Bondarenko, G.G. & Stolyarov, A.A. Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection. Inorg. Mater. Appl. Res. 7, 187–191 (2016). https://doi.org/10.1134/S2075113316020039
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DOI: https://doi.org/10.1134/S2075113316020039