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Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctions

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Abstract

Cd1−x Zn x S/p-GaAs heterojunctions for solar cell applications have been prepared by growing single crystal Cd1−x Zn x S epitaxial layers on (111)GaAs substrates through a vapour phase chemical transport method using the close-spaced geometry and H2 as a transport agent. Electrical and photovoltaic properties of the heterojunctions have been investigated and discussed in connection with the main features of the growth technique. AM1 power conversion efficiencies up to 6.2% have been measured and possible improvements have been examined.

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Authors and Affiliations

  1. Laboratorio MASPEC del C.N.R., I-43100, Parma, Italy

    P. Franzosi, C. Ghezzi & E. Gombia

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  1. P. Franzosi
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  2. C. Ghezzi
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  3. E. Gombia
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Franzosi, P., Ghezzi, C. & Gombia, E. Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctions. Appl. Phys. 21, 83–90 (1980). https://doi.org/10.1007/BF00886486

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