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Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE)

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Abstract

Heterostructure p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs was evaporated using molecular beam epitaxy and investigated for photovoltaic energy conversion application. The electrical properties of the studied heterostructure were measured and characterized in order to understand the relevant electrical transport mechanisms. Electrical properties derived from the current–voltage (I–V) characteristics of solar cells provide essential information necessary for the analysis of performance losses and device efficiency. I–V characteristics are investigated in dark conditions and under different light intensities. All the electrical and power parameters of the heterostructure were measured, calculated and explained.

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Authors and Affiliations

  1. School of Basic Sciences and Humanities, German-Jordanian University (GJU), Amman, 11180, Jordan

    I. Jum’h & H. Al-Taani

  2. Nanomaterials Laboratory, Physics Department, Faculty of Science, South Valley University, Qena, 83523, Egypt

    M. S. Abd El-Sadek

  3. Nano-Science and Semiconductor Laboratories, Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

    I. S. Yahia

  4. Advaned Functional Materials and Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha, 9004, Saudi Arabia

    I. S. Yahia

  5. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland

    G. Karczewski

Authors
  1. I. Jum’h
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  2. M. S. Abd El-Sadek
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  3. H. Al-Taani
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  4. I. S. Yahia
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  5. G. Karczewski
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Correspondence to I. Jum’h.

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Jum’h, I., Abd El-Sadek, M.S., Al-Taani, H. et al. Influence of Illumination on the Electrical Properties of p-(ZnMgTe/ZnTe:N)/CdTe/n-(CdTe:I)/GaAs Heterojunction Grown by Molecular Beam Epitaxy (MBE). J. Electron. Mater. 46, 1061–1066 (2017). https://doi.org/10.1007/s11664-016-5071-7

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  • DOI: https://doi.org/10.1007/s11664-016-5071-7

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