Abstract
A study was made of the channeling of 6. 72 MeV protons in a silicon crystal at 100–800 °K. The experimental dependence of the limiting channeling angle agrees with the theoretical prediction. A relation is found between the relative number of channeled protons and the temperature.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 60–63, June, 1970.
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Kononov, B.A., Struts, V.K. Proton channeling in silicon at various temperatures. Soviet Physics Journal 13, 738–740 (1970). https://doi.org/10.1007/BF00836691
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DOI: https://doi.org/10.1007/BF00836691