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Slow Ion Channeling in Monocrystalline Silicon

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Abstract

The profiles of the distribution of Si+ ions over the depth of single-crystal silicon were calculated by the molecular dynamics method. The inelastic energy losses during deceleration are determined within the electron density functional theory. The factors affecting the ion channeling process are analyzed. In particular, the existence of the mass effect for the critical channeling angle is confirmed.

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ACKNOWLEDGMENTS

We are grateful to P.A. Aleksandrov for his great help in discussing the results of this work.

Funding

This work was supported by the National Research Center “Kurchatov Institute” (order no. 1575 of July 16, 2019).

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  1. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

    A. B. Svechnikov

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  1. A. B. Svechnikov
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Correspondence to A. B. Svechnikov.

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Translated by E. Chernokozhin

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Svechnikov, A.B. Slow Ion Channeling in Monocrystalline Silicon. Phys. Solid State 62, 2293–2300 (2020). https://doi.org/10.1134/S1063783420120276

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