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Comparison of the radiation hardness of silicon and silicon carbide

  • Electronic Properties of Semiconductors
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Abstract

The radiation hardness of silicon carbide and silicon are compared. It is shown that one of the main characteristics of the radiation hardness of a semiconductor, the carrier removal rate V d , strongly depends on its measurement conditions in the case of wide-gap semiconductors. A conclusion is made that comparison of the values of V d , obtained at room temperature for SiC and Si, is not fully adequate from the physical standpoint.

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Authors and Affiliations

  1. St. Petersburg State Polytechnic University, St. Petersburg, 195251, Russia

    V. V. Kozlovski

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. A. Lebedev

Authors
  1. A. A. Lebedev
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  2. V. V. Kozlovski
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Correspondence to V. V. Kozlovski.

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Original Russian Text © A.A. Lebedev, V.V. Kozlovski, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 10, pp. 1329–1331.

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Lebedev, A.A., Kozlovski, V.V. Comparison of the radiation hardness of silicon and silicon carbide. Semiconductors 48, 1293–1295 (2014). https://doi.org/10.1134/S1063782614100170

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  • DOI: https://doi.org/10.1134/S1063782614100170

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