Abstract
We have studied theGd 3+ EPR at 9.2 HGz in 0.1 at % GdS inTmS, 1 at %GdTe inTmTe, and 1 at %GdSe inTmSe. From the temperature dependence of theGd 3+ linewidth we have concluded thatTm inTmS is trivalent. The temperature variation of theGd 3+ linewidth inTmTe has been interpreted as the result of the “delocalization” of the extra electron “localized” aroundGd 3+. Theg-value and linewidth data are consistent with the identification thatTm inTmTe is divalent. The linewidth and theg-value of theGd 3+ resonance inTmSe have been found to be temperature independent. These striking results have been attributed to the “motional narrowing” effect arising from valence fluctuations ofTm inTmSe.
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Work performed under the auspices of the U.S. ERDA.
Supported in part by NSF.
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Huang, C.Y., Sugawara, K. EPR studies of the valence states of thulium in thulium monochalcogenides. J Low Temp Phys 28, 229–239 (1977). https://doi.org/10.1007/BF00668216
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DOI: https://doi.org/10.1007/BF00668216