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The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100)

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Abstract

Surface Plasmon excitations are measured by high resolution electron energy loss spectroscopy (HREELS) on highyln-doped, clean Si(100) wafers. After different annealing cycles at 900°C the plasmon loss shifts to lower loss energy. This effect can be quantitatively described by out-diffusion of the phosphorus dopant. The assumption of diffusion profiles and fits of calculated loss spectra to the experimental data allow a determination of the diffusion constant of phosphorus in silicon.

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Author notes

  1. J. M. Layet

    Present address: Departement de Physique, Case 901-70, Faculté des Sciences de Luminy, CRMC2, Route Léon-Lachamp, F-13288, Marseille, Cedex 9, France

Authors and Affiliations

  1. 2. Physikalisches Institut der Rheinisch-Westfälischen Technischen Hochschule, D-5100, Aachen, Germany

    A. Förster, J. M. Layet & H. Lüth

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  1. A. Förster
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  2. J. M. Layet
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  3. H. Lüth
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Förster, A., Layet, J.M. & Lüth, H. The effect of inhomogeneous dopant profiles on the electron energy loss spectra of Si(100). Appl. Phys. A 47, 95–97 (1988). https://doi.org/10.1007/BF00619705

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  • DOI: https://doi.org/10.1007/BF00619705

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