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Unoccupied electronic levels and conduction-band structure of Xe(111) probed by inverse photoemission

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Abstract

Inverse photoemission spectra from Xe(111) crystals grown on an Ag(111) substrate show features which are interpreted in terms of density-of-states emission from the conduction bands of Xe along theГ-L direction. The energies of critical points determined by this method show good agreement with recent spin-polarised photoemission band mapping. A peak which is located in the fundamental band gap is tentatively assigned to surface emission, on the basis of an experiment in which this peak is quenched by covering the Xe crystal with one monolayer of krypton.

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Frank, K.H., Horn, K., Wilder, J. et al. Unoccupied electronic levels and conduction-band structure of Xe(111) probed by inverse photoemission. Appl. Phys. A 44, 97–99 (1987). https://doi.org/10.1007/BF00617898

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  • DOI: https://doi.org/10.1007/BF00617898

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