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Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges

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Abstract

Two quartz crystal microbalances have been mounted in a planar rf discharge system in such a way that the potential of the microbalances with respect to the glow discharge can be varied. This apparatus allows a rapid simulation of the etching directionality that can be expected in real pattern transfer situations in that operating one microbalance at ground and one at a negative potential gives a measure of the sidewall and vertical etch rates, respectively. The voltage threshold for ion-assisted etching has been determined to be 20 V which is the approximate value of the plasma potential in this asymmetric system.

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Author notes

  1. Natasha C.Us

    Present address: Standard Micro Systems Corp., 35 Marcus Blvd., 11787, Hauppauge, New York

Authors and Affiliations

  1. IBM Research Laboratory, 650 Harry Rd., 95120-6099, San Jose, California

    Natasha C.Us, R. W. Sadowski & J. W. Coburn

Authors
  1. Natasha C.Us
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  2. R. W. Sadowski
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  3. J. W. Coburn
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C.Us, N., Sadowski, R.W. & Coburn, J.W. Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges. Plasma Chem Plasma Process 6, 1–10 (1986). https://doi.org/10.1007/BF00573817

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  • DOI: https://doi.org/10.1007/BF00573817

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