Plasma Chemistry and Plasma Processing

, Volume 6, Issue 1, pp 1–10 | Cite as

Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges

  • Natasha C.Us
  • R. W. Sadowski
  • J. W. Coburn


Two quartz crystal microbalances have been mounted in a planar rf discharge system in such a way that the potential of the microbalances with respect to the glow discharge can be varied. This apparatus allows a rapid simulation of the etching directionality that can be expected in real pattern transfer situations in that operating one microbalance at ground and one at a negative potential gives a measure of the sidewall and vertical etch rates, respectively. The voltage threshold for ion-assisted etching has been determined to be 20 V which is the approximate value of the plasma potential in this asymmetric system.

Key words

Plasma etching silicon in CF4 etching directionality micro balance 


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Copyright information

© Plenum Publishing Corporation 1986

Authors and Affiliations

  • Natasha C.Us
    • 1
  • R. W. Sadowski
    • 1
  • J. W. Coburn
    • 1
  1. 1.IBM Research LaboratorySan Jose

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