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Dynamics of Deposition and Removal of a Fluorocarbon Film in the Cyclic Process of Plasma-Chemical Etching of Silicon

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

In situ measurements were made of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer. Direct measurements of the deposition and etch rates and the etch time of the FCF open up new possibilities for optimizing the cycle procedure. For example, adjusting the etch time of the FCF improves the selectivity of the etching process.

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ACKNOWLEDGMENTS

The author is grateful to A.A. Kupriyanov for the development of computer programs for controlling the TMDSE process and processing interferometer data.

Funding

The work was carried out within the framework of state assignment no. FFNN-2022-0017 for the Valiev Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl Branch, Yaroslavl, Russia, using the equipment of the Center for Collective Use “Diagnostics of Micro- and Nanostructures.”

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  1. Valiev Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl Branch, 150007, Yaroslavl, Russia

    O. V. Morozov

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  1. O. V. Morozov
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Correspondence to O. V. Morozov.

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Morozov, O.V. Dynamics of Deposition and Removal of a Fluorocarbon Film in the Cyclic Process of Plasma-Chemical Etching of Silicon. Bull. Russ. Acad. Sci. Phys. 88, 447–453 (2024). https://doi.org/10.1134/S1062873823706050

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  • DOI: https://doi.org/10.1134/S1062873823706050

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