Abstract
A general theory on the field-enhanced carrier generation of deep-level centers in semiconductors is put forward in order to explain the relevant phenomena observed in some experiments. It is concluded that generally both the Coulombic and the non-Coulombic emissions control the generation process of carriers from deep-level centers. On the basis of this, a theoretical relationship between the generation current density and the effective generating width is derived. Further it is shown that the present theory is better than the previous ones in which the non-Coulombic emission was ignored in explaining the experimental results and the latter can be considered a special case of the former.
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