Abstract
Thin films of Sb, Se and Sb2Se3 are deposited onto glass and irradiated by a cw-Ar+ laser beam. The kinetics of crystallization and oxidation are traced via the time dependence of optical reflectivity and temperature, T, of the irradiated zone. For Sb2Se3, transformations start abruptly when T attains a critical value, T c, independently of the laser beam power. These T c values are comparable to the ones observed under furnace annealing conditions.
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Kolev, K., Wautelet, M. Kinetics of CW laser-induced crystallization and oxidation of thin, Sb, Se, and Sb2Se3 films in air. Appl. Phys. A 52, 192–196 (1991). https://doi.org/10.1007/BF00324417
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DOI: https://doi.org/10.1007/BF00324417