Abstract
WSi2 polycrystalline films of different thicknesses were prepared by low pressure chemical vapor deposition on silicon wafers, and their crystallization properties were studied as a function of the annealing temperature. Structural measurements were performed by X-ray diffraction, detailing for the first time the phase transition from the amorphous to the hexagonal structure at an annealing temperature 380° C and from hexagonal to tetragonal above 700° C. The electrical sheet resistance showed the same transition temperatures.
Optical characterization was performed by spectroscopic ellipsometry, and the real and imaginary part of the complex refractive index were obtained as a function of the annealing temperature in the 0.25–0.9 μm wavelength range. A broad optical band was found for samples annealed up to 700° C, while for higher annealing temperatures a transparency region for wavelengths greater than 0.5 μm and some significant structures appear. A corresponding behavior was observed in the infrared reflectance spectra. Furthermore, it was shown that the determination of the thickness of SiO2 grown on WSi2 requires a multilayer model, taking into account the transparency of tetragonal WSi2.
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References
S.P. Murarka: Microelectronic Materials and Processes, ed. by R.A. Levy (Kluwer, Dordrecht 1989)
F.M. d'Heurle, 0.S. Petersson M.Y. Tsai: J. Appl. Phys. 51, 5976 (1980)
M.Y. Tsai, F.M. d'Heurle, C.S. Petersson, R.W. Johnson: J. Appl. Phys. 52, 5350 (1981)
F. Nava, B.Z. Weiss, K.Y. Ahn, D.A. Smith, K.N. Tu: J. Appl. Phys. 64, 354 (1988)
S.C. Tjong, I.C. Hsieh: Mater. Res. Bull. 2, 841 (1987)
S.P. Murarka, M.H. Read, C.C. Chang: J. Appl. Phys. 52, 7451 (1981)
R. Madar, C. Bernard: J. de Phys. Coll. C 5, 479 (1989)
A. Borghesi, A. Piaggi, G. Guizetti, F. Nava, M. Bacchetta: Phys. Rev. B 40, 3249 (1989)
D.E. Aspnes: Handbook of Optical Constants of Solids, ed. by E.D. Palik (Academic, Orlando 1985) p. 89
D.E. Aspnes: J. Opt. Soc. Am. 64, 639 (1974)
H.P. Klug, L.E. Alexander: X-Ray Diffraction Procedures For Polycrystalline and Amorphous Materials (Wiley, New York (1974) p. 687
F. Nava, K.N. Tu, E. Mazzega, M. Michelini, G. Queirolo: J. Appl. Phys. 61, 1085 (1987)
V.N. Antonov, Vl.N. Antonov, O. Jepsen, O.K. Andersen, A. Borghesi, C. Bosio, F. Marabelli, A. Piaggi, G. Guizzetti, F. Nava: Phys. Rev. B 44 (1991) in press
O.S. Heavens: Optical Properties of Thin Solid Films (Butterworths, London 1955) p. 69
M. Delfino, W.I. Lehrer: J. Electrochem. Soc. 128, 1071 (1981)
R.D. Frampton, E.A. Irene, F.M. d'Heurle: J. Appl. Phys. 59, 978 (1986)
P.A. Heiman, S.P. Murarka, J. Rosario: Mater. Lett. 2, 31 (1983)
K. Shenai: J. Appl. Phys. 69, 3646 (1991)
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Amiotti, M., Bellandi, E., Borghesi, A. et al. Influence of annealing temperature on structural, electrical and optical properties of WSi2 . Appl. Phys. A 54, 181–185 (1992). https://doi.org/10.1007/BF00323908
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DOI: https://doi.org/10.1007/BF00323908