Abstract
We propose a new method to considerably reduce the overall growth interruption for high-quality GaAs single quantum wells during molecular beam epitaxy. The insertion of ultrathin AlAs smoothing layers at the constituent GaAs/Al x Ga1−x As heterointerfaces and growth interruptions of not more than 15 s yields an improvement of the luminescence linewidth (FWHM) to 0.56 meV for a 13 nm wide GaAs well and to a value as low as 0.195 meV for a 27 nm wide GaAs well. In addition, no Stokes shift between absorption and emission and no line splitting due to monolayer fluctuations in the well width is observed.
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Ploog, K., Fischer, A., Tapfer, L. et al. Extremely narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers. Appl. Phys. A 52, 135–137 (1991). https://doi.org/10.1007/BF00323730
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DOI: https://doi.org/10.1007/BF00323730