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Spin relaxation of 3He to paramagnetic centers in surfaces at very low temperatures

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The memory function formalism is used to derive a generalized golden rule expression for the spin-lattice relaxation rate 1/T 1 for 3He to paramagnetic centers embedded in or residing on surfaces in contact with the 3He. This expression is applied to several simple models of relaxation to paramagnetic spins which do not interact among themselves, both for 3He in the Fermi-liquid phase and for a solid surface layer of 3He on the substrate. The magnitude of 1/T 1 is calculated for each case as well as the temperature and magnetic field dependence. Finally, the relationship between the spin-lattice relaxation rate and the Kapitza conductance across surfaces via magnetic interactions is determined.

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Authors and Affiliations

  1. Theoretical Division, Los Alamos Scientific Laboratory, Los Alamos, New Mexico

    R. C. Albers

  2. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York

    J. W. Wilkins

Authors
  1. R. C. Albers
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  2. J. W. Wilkins
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Additional information

Supported by National Science Foundation grant number DMR77-18329.

Research performed under the auspices of ERDA.

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Albers, R.C., Wilkins, J.W. Spin relaxation of 3He to paramagnetic centers in surfaces at very low temperatures. J Low Temp Phys 34, 105–156 (1979). https://doi.org/10.1007/BF00118552

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  • DOI: https://doi.org/10.1007/BF00118552

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