Abstract
A numerical method is proposed to model Kelvin probe force microscopy of hetero-structures in the dark and under illumination. It is applied to FTO/TiO2 and FTO/TiO2/MAPbI3 structures. The presence of surface states on the top of the TiO2 layers are revealed by combining theoretical computation and experimental results. Basic features of Kelvin probe force microscopy under illumination, namely surface photovoltage, are simulated as well. The method paves the way toward further investigations of more complicated optoelectronic devices.
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Acknowledgements
The work at FOTON was supported by French ANR SupersansPlomb project. Y.H.’s work at Xlim and IPVF was supported by HPERO GDR (CNRS).
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 17.
Guest edited by Matthias Auf der Maur, Weida Hu, Slawomir Sujecki, Yuh-Renn Wu, Niels Gregersen, Paolo Bardella.
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Huang, Y., Gheno, A., Rolland, A. et al. A new approach to modelling Kelvin probe force microscopy of hetero-structures in the dark and under illumination. Opt Quant Electron 50, 41 (2018). https://doi.org/10.1007/s11082-017-1305-z
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DOI: https://doi.org/10.1007/s11082-017-1305-z