Abstract
Although BiFeO3-based photovoltaic devices have currently attracted much attention due to their unique physical properties, their practical applications have been limited by the complex and obscure intrinsic physical mechanisms. This paper reported the synthesis of the Ni, Sm co-doped BiFeO3 film capacitors by a spin-coating technology. The results and analysis showed that co-doped BiFeO3 films exhibited low leakage current and well saturated ferroelectric hysteresis loops. Especially, the photovoltaic effect and diode-like effect of ferroelectric film capacitors could be efficiently modulated by the external polarization. The complex intrinsic physical mechanism of photovoltaic effect and diode-like effect under polarization modulation was studied and explained clearly by the energy-band diagram and the theory of ferroelectric polarization. Moreover, the effect of inherent and external factors on photovoltaic output of BiFeO3 films was jointly analyzed by the ferroelectric polarization and photovoltaic mechanism. This theoretical exploration may facilitate to improve the understanding of the photovoltaic effect in ferroelectrics, which will be likely to have the opportunity to advance the design of switchable devices that combine ferroelectric and photovoltaics.
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Acknowledgements
Financial support by the National Natural Science Foundation of China (Grant NO. 51272204) is gratefully acknowledged. The authors also thank Ms. Dai and Mr. Ma for their help in using FE-SEM at International Center for Dielectric Research (ICDR), Xi’an Jiaotong University, China.
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TT Yang conceived and carried out the experiments. TT Yang and J Wei analyzed the data, and wrote the paper. All authors read and approved the final manuscript.
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Yang, T., Wei, J., Lv, Z. et al. Ferroelectric polarization tuning the photovoltaic and diode-like effect of the Ni, Sm co-doped BiFeO3 film capacitors. J Mater Sci: Mater Electron 30, 12163–12169 (2019). https://doi.org/10.1007/s10854-019-01574-9
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DOI: https://doi.org/10.1007/s10854-019-01574-9