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2-D modeling and analysis of short-channel behavior of a front high-K gate stack triple-material gate SB SON MOSFET

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Abstract

This paper presents the 2-D analytical modeling of a front high-K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson’s equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

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Acknowledgements

Pritha Banerjee thankfully acknowledges the financial support obtained from UGC vide file no. 43-293/2014 (SR) dated 29.12.2015.

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Authors and Affiliations

  1. Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, 700032, India

    Pritha Banerjee, Tripty Kumari & Subir Kumar Sarkar

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  1. Pritha Banerjee
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  2. Tripty Kumari
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  3. Subir Kumar Sarkar
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Correspondence to Pritha Banerjee.

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Banerjee, P., Kumari, T. & Sarkar, S.K. 2-D modeling and analysis of short-channel behavior of a front high-K gate stack triple-material gate SB SON MOSFET. Appl. Phys. A 124, 153 (2018). https://doi.org/10.1007/s00339-018-1567-8

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