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Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping

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Abstract

This paper presents the two-dimensional analytical modeling of high-k gate stack Triple material double gatestrained SON MOSFET with a vertical Gaussian-like doping profile. The expression for surface potential has been calculated by solving the 2-D Poisson’s equation and by considering the parabolic potential approximation. The threshold voltages as well as the electric field are also calculated for the proposed model. In addition, detailed studies of the device response towards the various short-channel effects are also examined. The analytical results are verified using the results obtained from a 2-D device simulator, namely ATLAS, Silvaco.

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Acknowledgements

Pritha Banerjee thankfully acknowledges the financial support obtained from UGC vide file no. 43-293/2014 (SR) dated 29.12.2015. Priyanka Saha thankfully acknowledges the financial support as Ph.D. fellow under “Visvesvaraya PhD Scheme”, Deit Y, Government of India.

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Authors and Affiliations

  1. Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, 700032, India

    Pritha Banerjee, Priyanka Saha & Subir Kumar Sarkar

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  1. Pritha Banerjee
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  2. Priyanka Saha
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  3. Subir Kumar Sarkar
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Correspondence to Pritha Banerjee.

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Banerjee, P., Saha, P. & Sarkar, S.K. Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping. J Comput Electron 17, 172–180 (2018). https://doi.org/10.1007/s10825-017-1089-1

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  • DOI: https://doi.org/10.1007/s10825-017-1089-1

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