Abstract
Thin films of ZnO, Ti doped ZnO and Mn doped ZnO were prepared on flexible polyimide substrates by means of the RF sputtering technique for different sputtering parameters, and their structural and electronic properties were investigated. Grazing incidence X-ray diffraction (GI-XRD) results confirmed that the grown samples followed the hexagonal wurtzite symmetry. The lattice parameters and the crystallite size showed a dependence on doping as well as deposition condition. The presence of oxygen during sputtering growth significantly suppressed the crystallite size and increased the number of oxygen defect states. The effect of doping and the deposition parameters on the electronic structure of flexible ZnO thin films was also realized through X-ray absorption measurements.
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Acknowledgments
This work was supported through the “Global collaborative R&D program” (No. N0002095) of the Korea Institute for Advancement of Technology (KIAT) grant and also by National Research Foundation of Korea (NRF) grant (Grant No. NRF-2015R1A5A1009962) funded by the Korean government.
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Kumar, M., Singh, J.P., Lee, H.H. et al. Structural and Electronic Properties of Flexible ZnO and Ti/Mn:ZnO Thin Films. J. Korean Phys. Soc. 77, 452–456 (2020). https://doi.org/10.3938/jkps.77.452
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DOI: https://doi.org/10.3938/jkps.77.452