Abstract
The ZnSe thin films with different thicknesses have been deposited on polymer substrates for flexible optical devices applications. The XRD of different thicknesses for ZnSe films reveals the cubic structure of the films oriented along the (1 1 1) direction. The structural parameters such as particle size (40.41–105.24 nm) and lattice strain (6.5 × 10−3–14.7 × 10−3 lin−2m−4) were evaluated. Also AFM was used in order to obtain quantitative information on microstructure properties. The optical constants, the refractive index n and the absorption index k have been calculated from transmittance T and reflectance R through the spectral range of 400–2500 nm using Swanepoel’s method. The optical constants (n, k) were calculated in medium and transparent regions. The energy gap of direct transition for polycrystalline ZnSe thin films was calculated in the strong absorption region and found to be increased from 2.55 eV to 2.70 eV with the increasing the film thickness. ZnSe/flexible substrates are good candidates for optoelectronic devices.
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G. Riveros, H. Gomez, R. Henriguez, R. Schrebler, R.E. Maratti, and E.A. Dalchiele, Sol. Energy Mater. Sol. Cells 70, 255 (2001).
V. Kumar and T. P. Sharma, Opt. Mater. 10, 253 (1998).
L. Ting Chu and S.C. Shirley, Solid-State Electron. 38, 533 (1995).
E.R. Shaaban, I.S. Yahia, and M.F. J. Alloys Compound. 469, 427 (2009).
L.M. Caicedo, G. Cediel, A. Dussan, J.W. Sandino, C. Calderon, and G. Gordillo, Phys. Status Solidi B 220, 249 (2000).
B. Su and K. L. Choy, Thin Solid Films 102, 361 (2000).
S. Taniguchi, T. Hino, S. Itoh, K. Nakano, N. Nakayama, A. Ishibashi, and M. Ikeda, Elect Lett. 32, 522 (1996).
S. Armstrong, P.K. Datta, and R.W. Mile, Thin Solid Films 403, 126 (2002).
E. Loh and R. Newman, J. Phys. Chem. Solids 21, 324 (1961).
R.E. Halsted and M. Aven, Bull. Am. Phys. Soc. 6, 312 (1961).
D.J. Flood and W. Irving, NASA Technical Memorandum 106777, National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio, November 1994.
J.C. McClure, V.P. Singh, G.B. Lush, E. Clark, and G. Thompson, Sol. Energy Mater. Sol. Cells 55, 141 (1998).
G. Cui, D. Wu, S. Qi, S. Jin, Z. Wu, and R. Jin, Appl. Mater. Interfaces 3, 789 (2011).
K. Kamide and M. Saito, Polymer J. 17, 19 (1985).
R. Swanepoel, J. Phys. E: Sci. Instrum. 17, 896 (1984).
B.D. Cullity, Elements of X-Ray Diffraction, 2nd ed. (London: Addition-Wesley, 1978).
E.R. Shaaban, I. Kansal, S.H. Mohamed, J.M.F. Ferreira, and E.R. Shaaban, Phys. B: Condensed Matter 404, 3571 (2009).
E.R. Shaaban, I.S. Yahia, N. Afify, G.F. Salem, and W. Dobrowolski, Mater. Sci. Semiconductor Process. 19, 107 (2014).
E.R. Shaaban, Philos. Mag. 88, 781 (2008).
E.R. Shaaban, Mat. Chem. Phys. 100, 411 (2006).
E. Márquez, J.M. González-Leal, A.M. Bernal-Oliva, R. Jiménez-Garay, and T. Wagner, J. Non-Crystal. Solids 354, 503 (2008).
E.R. Shaaban, M.A. Kaid, E.S. Moustafa, and A. Adel, J. Phys. D: Appl. Phys. 41, 125301 (2008).
F.A. Jenkins and H. E. White, Fundamentals of Optics, 3rd ed. (McGraw-Hill, New York, 1957) p.496.
L.E. Brus, J. Chem. Phys. 80, 4403 (1984).
E.R. Shaaban, Philos. Mag. 88, 781 (2008).
M. Nowak, Thin Solid Films 266, 258 (1995).
E.A. Davis and N.F. Mott, Philos. Mag. 22, 903 (1970).
M. Kastner, Phys. Rev. Lett. 28, 355 (1972).
M.A. Mohammed, J. Tech. Eng. 27, 1174 (2009).
F. Chowdhury, J. Electron Devices 10, 448 (2011).
N. Revathi, P. Prathap, and K.T.R. Reddy, Solid State Sci. 11, 1288 (2009).
E.R. Shaaban, N. Afify, and A. El-Taher, J. Alloys Compd. 482, 400 (2009).
J.I. Pankove, Optical Processes in Semiconductors (New York: Dover, 1971), p. 44.
M. Öztas and M. Bedir, Thin Solid Films 516, 1703 (2008).
S.K. Biswas, S. Chaudhuri, and A. Choudhury, Phys. Status. Solidi (A) 105, 467 (1988).
K.I. Arshak and C. Ahogarth, Thin Solid Films 137, 281 (1986).
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Shaaban, E.R., Yahia, I.S. & Sharaf, E.R. Structure Analysis and Optical Parameters of Nano-scale ZnSe/Flexible Substrate Thin Film. J. Electron. Mater. 46, 527–534 (2017). https://doi.org/10.1007/s11664-016-4926-2
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DOI: https://doi.org/10.1007/s11664-016-4926-2