Abstract
InAs quantum dots (QDs) were grown grown in an Al0.95Ga0.05As matrix by using the molecularbeam epitaxy technique. Photoluminescence (PL) measurements were made as functions of the magnetic fields and the temperature. Two prominent PL transitions were observed from QDs and defects in the matrix layer at 5 K. In magnetic fields, the transition from QDs does not change its spectral shape at magnetic fields up to 15 T, whereas the defect-related transition shows a blue-shift at magnetic fields above 8 T. By varying the temperature from 5 K to room temperature, the transition from QDs persists up to ~ 200 K and the defects-related transition quenches quickly near 70 K. The activation energies obtained by using an Arrhenius fitting of the PL intensities indicate that the excitons dissociated by thermal energy transfer into higher energy levels.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. Pothier. P. Lafarge, C. Urbina, D. Esteve and M. H. Devoret, Europhys. Lett. 17, 249 (1992).
D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998).
E. B. Stokes, A. D. Stiff-Roberts and C. T. Dameron, The Electrochemical Society Interface, Winter 2006, p. 23.
J. A. Lott et al., Elect. Lett. 36, 3 (2000).
M. R. Kimand D. Ma, J. Phys. Chem. Lett. 6, 85 (2015), and references therein.
R. J. Warburton et al., Phys. Rev. Lett. 79, 5282 (1997).
Y. Z. Hu et al., Phys. Rev. Lett. 64, 1805 (1990).
N. Miura, Physics of Semiconductors in High Magnetic Fields (Oxford University Press, New York, 2008), Chap. 2, p. 52.
Yu. E. Lozovik et al., Phys. Rev. B 65, 235304 (2002).
M-F. Tsai et al., Phys. Rev. Lett. 101, 267402 (2008).
B. Alén et al., Nanotechnology 20, 475202 (2009).
Richard Nötzel, IEEE Photonics J. 2, 67 (2010).
Y. Kim, J. D. Song and I. K. Han, J. Korean Phys. Soc. 64, 1697 (2014).
P. Dawson et al., Appl. Phys. Lett. 81, 2349 (2002).
P. Offermans et al., Phys. Rev. B 72, 165332 (2005).
T. S. Shamirzaev et al., Appl. Phys. Lett. 92, 213101 (2008)
T. S. Shamirzaev et al., Phys. Rev. B 78, 085323 (2008).
T. S. Shamirzaev et al., Nanotechnology 21, 155703 (2010).
Y. P. Varshni, Physica 34, 149 (1967).
Z. Y. Xu et al., Phys. Rev. B 54, 11528 (1996).
H. J. Park, J. H. Kim, H. H. Ryu, M. Jeon, J. Y. Leem, J. S. Kim, J. S. Son and D. Y. Lee, J. Korean Phys. Soc. 51, 1383 (2007).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Shin, Y.H., Kim, Y. & Song, J.D. Optical quenching mechanism in InAs quantum dots in an Al0.95Ga0.05As matrix. Journal of the Korean Physical Society 70, 104–107 (2017). https://doi.org/10.3938/jkps.70.104
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.70.104