Abstract
The thermoelectric properties and Shubnikov–de Haas (SdH) oscillations of monocrystalline layers of a topological insulator (ТI) of n-type bismuth telluride were investigated. The monocrystalline Bi2Te3 layers were fabricated by the mechanical exfoliations of layers from a monocrystalline ingot of the appropriate composition. The cyclotron effective masses, the Dingle temperature, and the quantum mobilities of charge carriers were calculated from the experimental data by SdH oscillations both in longitudinal (H ║ I) and in perpendicular (H ⊥ I) magnetic fields at temperatures in the range of 2.1–4.2 K. It was found that the phase shift of the Landau levels index is 0.5 both for the parallel and for the perpendicular magnetic fields associated with the Berry phase of surface states. The power factor in the temperature range of 2–300 K was calculated from the temperature dependences of resistance and thermal e.m.f. It was stated that the power factor α2σ has a maximum value in the temperature range of 100–250 K, which corresponds to the maximum values for perfect monocrystals described in the literature. Taking into account that the heat conductivity in the thin layers is essentially lower than in the bulk samples, it is reasonable to expect a considerable increase in the thermoelectric efficiency over a wide temperature range, which is of great importance for the development of new highly effective thermoelectric materials based on thinner Bi2Te3 ТI layers for practical applications in thermogenerators and coolers.
Similar content being viewed by others
Change history
11 October 2018
The list of authors should read as follows: A. A. Nikolaeva<Superscript><Emphasis Type="Italic">a</Emphasis>, <Emphasis Type="Italic">b</Emphasis>, *</Superscript>, L. A. Konopko<Superscript><Emphasis Type="Italic">a</Emphasis>, <Emphasis Type="Italic">b</Emphasis></Superscript>, K. Rogackii<Superscript><Emphasis Type="Italic">b</Emphasis></Superscript>, P. P. Bodiul<Superscript><Emphasis Type="Italic">a</Emphasis>, <Emphasis Type="Italic">c</Emphasis></Superscript>, and I. Gherghishan<Superscript><Emphasis Type="Italic">a</Emphasis></Superscript>
References
Ioffe, L.F., Poluprovodnikovye termoelementy (Semiconductor Thermoelements), Moscow: Akad. Nauk SSSR, 1960.
Tritt, T.M., Annu. Rev. Mater. Res., 2011, vol. 41, pp. 433–448.
Goldsmid, H.J., Thermoelectric Refrigeration, New York: Plenum, 1964.
Rowe, D.M., CRC Handbook of Thermoelectrics, Boca Raton, Fl: CRC Press, 1995.
Behnia, K., Fundamentals of Thermoelectricity, Oxford: Oxford Univ. Press, 2015. http://ukcatalogue.oup.com/product/9780199697663.do.
Mishra, S.K., Satpathy, S. and Jepsen, O., JPCM, 1997, vol. 9, no. 2, p.461.
Kadel, K., Kumari, L., Li, W.Z., Huang J., et al., Nanoscale Res. Lett., 2011, vol. 6, no. 57, pp. 1–7.
Silva, L.W., Kaviany, M. and Uher, C., J. Appl. Phys., 2005, vol. 97, p. 114903.
Ovsyannikov, S.V., Shchennikov, V.V., Vorontsov, G.V., Manakov, A.Y., et al., J. Appl. Phys., 2008, vol. 104, no. 5, art. ID 053713.
Meng, J.F., Shekar, N.V., Badding, J.V., Chung, D.Y., et al., J. Appl. Phys., 2001, vol. 90, no. 6, p. 2836.
Fu, L. and Kane, C.L., Phys. Rev. B, 2007, vol. 76, art. ID 045302.
Hasan, M.Z. and Kane, C.L., Rev. Mod. Phys., 2010, vol. 82, no. 4, pp. 3045–3067.
Qu, D.-X., Hor, Y.S., Xiong, J., Cava, R.J., et al., Science, 2010, vol. 329, no. 5993, p.821.
Taskin, A., Ren, Z., Sasaki, S., Segawa, K., et al., Phys. Rev. Lett., 2011, vol. 107, art. ID 016801.
Takahashi, R. and Murakami, S., Semicond. Sci. Technol., 2012, vol. 27, no. 12, p. 124005.
Hicks, L.D. and Dresselhaus, M.S., Phys. Rev. B, 1993, vol. 47, no. 19, p. 12727.
Dresselhaus, M.S., Dresselhaus, G., Sun, X., Zhang, Z., et al., Phys. Solid State, 1999, vol. 41, no. 5, pp. 679–682.
Heremans, J.P., Thrush, C.M., and Morelh, D.T., Phys. Rev. B, 2004, vol. 70, p. 115334.
Hicks, L.D., Harman, T.C., and Dresselhaus, M.S., Appl. Phys. Lett., 1993, vol. 63, no. 23, p. 3230.
Venkatasubramanian, R., Siivola, E., Colpitts, T., et al., Nature, 2001, vol. 413, pp. 597–602.
Goyal, V., Teweldebrhan, D. and Balandin, A.A., Appl. Phys. Lett., 2010, vol. 97, p. 133117.
Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., et al., Science, 2004, vol. 306, no. 5696, pp. 666–669.
Konopko, L.A., Nikolaeva, A.A., and Khuber, T.E., Nanosyst., Nanomater., Nanotechnol., 2011, vol. 9, no. 1, pp. 67–75.
Brandt, N.B. and Chudinov, S.M., Eksperimental’nye metody issledovaniya energeticheskikh spektrov elektronov i fonov v metallakh (Analysis of Energy Spectra of Electrons and Photons in Metals), Moscow: Mosk. Gos. Univ., 1983.
Seeger, K., Semiconductor Physics: An Introduction, 2004, 9th ed.
He, L., Xiu, F., Yu, X., Teague, M., et al., Nano Lett., 2012, vol. 12, pp. 1486–1490.
Luk’yanova, L.N., Boikov, Yu.A., Danilov, V.A., Usov, O.A., Volkov, M.P., and Kutasov, V.A., Phys. Solid State, 2014, vol. 56, no. 5, pp. 941–947.
Schoenberg, D., Magnetic Oscillations in Metals, Cambridge: Cambridge Univ. Press, 2009.
Rischau, C.W., Leridon, B., Fauqué, B., Metayer, V., and van der Beek, C.J., Phys. Rev. B, 2013, vol. 88, no. 20, art. ID 205207.
Ren, Z., Taskin, A.A., Sasaki, S., Segawa, K., et al., Phys. Rev. B, 2010, vol. 82, art. ID 241306.
Boikov, Yu.A., Gribanova, O.S., Danilov, V.A., and Kutasov, V.A., Fiz. Tverd. Tela, 1991, vol. 11, p. 3414.
Konopko, L.A., Nikolaeva, A.A., Huber, T.E. and Meglei, D.F., Phys. Status Solidi C, 2014, vol. 11, pp. 1377–1381.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.A. Nikolaeva, L.A. Konopko, K. Rogatskii, P.P. Bodyul, I. Gergishan, 2018, published in Elektronnaya Obrabotka Materialov, 2017, No. 5, pp. 67–72.
About this article
Cite this article
Nikolaeva, A.A., Konopko, L.A., Rogatskii, K. et al. Thermoelectric Properties and Surface States in the Layers of Bi2Te3 Topological Insulators. Surf. Engin. Appl.Electrochem. 54, 273–278 (2018). https://doi.org/10.3103/S1068375518030092
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068375518030092