Abstract
GaAs/Ge/GaAs heterostructures in which the GaAs layer lattice on Ge is rotated at a right angle to the substrate plane are grown by molecular-beam epitaxy (MBE). Such heterostructures are grown in different epitaxial setups for GaAs and for Ge with wafer transfer through air tor the first time. It is proposed to use surfactants (Bi, Sb) to control GaAs layer nucleation on Ge.
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Original Russian Text © I.P. Kazakov, V.I. Tsekhosh, M.A. Bazalevsky, A.V. Klekovkin, 2017, published in Kratkie Soobshcheniya po Fizike, 2017, Vol. 44, No. 7, pp. 3–10.
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Kazakov, I.P., Tsekhosh, V.I., Bazalevsky, M.A. et al. Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. I. Molecular beam epitaxy. Bull. Lebedev Phys. Inst. 44, 187–191 (2017). https://doi.org/10.3103/S1068335617070016
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DOI: https://doi.org/10.3103/S1068335617070016