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GaAs/Ge/GaAs Heterostructures for Use in Nonlinear Optics

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

GaAs/Ge/GaAs heterostructures with sublattice reversed GaAs on Ge epilayers grown via molecular beam epitaxy (MBE) for periodic domain inverted structures are presented. For the first time, such structures are grown in separate MBE machines for GaAs and Ge with atmospheric wafer transfer. The high quality of the heterostructures is confirmed via X-ray diffraction and photoluminescence. It is proposed that the surfactants (Bi, Sb) be used to control the nucleation of GaAs epilayers on a Ge epilayer.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    I. P. Kazakov, A. A. Pruchkina, M. A. Bazalevsky, V. I. Tsekhosh & A. V. Klekovkin

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  1. I. P. Kazakov
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  2. A. A. Pruchkina
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  3. M. A. Bazalevsky
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  4. V. I. Tsekhosh
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  5. A. V. Klekovkin
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Correspondence to I. P. Kazakov.

Additional information

Original Russian Text © I.P. Kazakov, A.A. Pruchkina, M.A. Bazalevsky, V.I. Tsekhosh, A.V. Klekovkin, 2018, published in Izvestiya Rossiiskoi Akademii Nauk, Seriya Fizicheskaya, 2018, Vol. 82, No. 4.

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Kazakov, I.P., Pruchkina, A.A., Bazalevsky, M.A. et al. GaAs/Ge/GaAs Heterostructures for Use in Nonlinear Optics. Bull. Russ. Acad. Sci. Phys. 82, 412–417 (2018). https://doi.org/10.3103/S106287381804007X

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  • DOI: https://doi.org/10.3103/S106287381804007X

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