Abstract
The thermoelectric effect, i.e., generation of current and voltage under uniform heating, is for the first time observed in a graded-gap Si1–x Gex (0 ≤ x ≤ 1) continuous solid solution and an n–Si–p–Si1–x Gex heterostructure made on its basis. Currents of 0.0025–0.0035 µA and voltages of 0.05–0.3 mV have occurred in the temperature range of 40–250°C.
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Original Russian Text © A.Yu. Leiderman, A.S. Saidov, A.B. Karshiev, 2016, published in Geliotekhnika, 2016, No. 2, pp. 48–51.
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Leiderman, A.Y., Saidov, A.S. & Karshiev, A.B. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure. Appl. Sol. Energy 52, 115–117 (2016). https://doi.org/10.3103/S0003701X16020122
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DOI: https://doi.org/10.3103/S0003701X16020122