Abstract
We fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) top electrodes using chemical solution deposition. Then, the effects of a thin conductive ITO buffer layer between the Pt bottom electrode and PLZT thin film were investigated in combination with top electrode (ITO/PLZT/ITO/Pt). The H2 degradation resistance of ITO/PLZT/ITO/Pt capacitors with a 3- and 28-nm-thick buffer layer was improved to 78 and 85%, respectively, from 60% without a buffer layer. The time-of-flight secondary ion mass spectrometry profiles indicated the intensity of H ion increased after 45 min forming gas (3% H2/balance N2) annealing.
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Acknowledgments
The Pt-sputtered substrates were supplied by Fujitsu Semiconductor Limited. Part of this work was carried out with the support of the Nanotechnology Open Facilities at Osaka University, the Visiting Researcher’s Program of the Institute for Materials Research, Tohoku University, and the Cooperative Research Program of “Network Joint Research Center for Materials and Devices”. This study was supported by the NIMS Nanofabrication Platform in Nanotechnology Platform Project sponsored by the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT). This work was supported by a Grant-in-Aid for JSPS Fellows (Grant Number 1481004000).
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Takada, Y., Okamoto, N., Saito, T. et al. The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties. MRS Online Proceedings Library 1729, 93–98 (2014). https://doi.org/10.1557/opl.2015.263
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DOI: https://doi.org/10.1557/opl.2015.263