Abstract
An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at ~125 and ≤250°C) are observed. At the temperature T > 250°C, elemental tellurium is desorbed, and a Te-stabilized (1 × 1) CdTe(013) structure is formed.
Similar content being viewed by others
REFERENCES
A. Rogalski, Infrared and Terahertz Detectors (Chapman Hall/CRC, Boca Raton, FL, 2019).
P. Liu, J. R. Williams, and J. J. Cha, Nat. Rev. Mater. 4, 479 (2019).
C. Brüne, C. X. Liu, E. G. Novik, E. M. Hankiewicz, H. Buhmann, Y. L. Chen, X. L. Qi, Z. X. Shen, S. C. Zhang, and L. W. Molenkamp, Phys. Rev. Lett. 106, 1 (2011).
E. B. Olshanetsky, Z. D. Kvon, S. S. Kobylkin, D. A. Kozlov, N. N. Mikhailov, S. A. Dvoretskii, and J. C. Portal, JETP Lett. 93, 526 (2011).
M. König, S. Wiedmann, C. Brüne, A. Roth, H. Buhmann, L. W. Molenkamp, X. L. Qi, and S. C. Zhang, Science (Washington, DC, U. S.) 318, 766 (2007).
Z. D. Kvon, D. A. Kozlov, E. B. Olshanetsky, G. M. Gusev, N. N. Mikhailov, and S. A. Dvoretsky, Phys. Usp. 63, 629 (2020).
A. K. Kaveev, V. A. Golyashov, A. E. Klimov, E. F. Schwier, S. M. Suturin, A. S. Tarasov, and O. E. Tereshchenko, Mater. Chem. Phys. 240, 122134 (2020).
A. S. Tarasov, V. A. Golyashov, D. V. Ishchenko, I. O. Akhundov, A. E. Klimov, V. S. Epov, A. K. Kaveev, V. N. Sherstyakova, S. P. Suprun, and O. E. Tere-shchenko, Optoelectron., Instrum. Data Process. 56, 553 (2020).
V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. G. Remesnik, I. V. Sabinina, Yu. G. Sidorov, V. A. Shvets, M. V. Yakushev, and A. V. Latyshev, Optoelectron., Instrum. Data Process. 56, 456 (2020).
H. Zogg, C. Maissen, J. Masek, T. Hoshino, S. Blunier, and A. N. Tiwari, Semicond. Sci. Technol. 6, 36 (1991).
V. N. Ovsyuk, G. L. Kuryshev, and Yu. G. Sidorov, Matrix Photodetectors of Infrared Range (Nauka, Novosibirsk, 2001) [in Russian].
N. I. Filimonova, V. A. Ilyushin, and A. A. Velichko, Optoelectron., Instrum. Data Process. 53, 303 (2017).
A. A. Velichko, V. A. Ilyushin, N. I. Filimonova, and D. I. Ostertak, Nauch. Vestn. NGTU 25, 131 (2006).
S. Ma, C. Guo, C. Xiao, F. Wu, M. Smidman, Y. Lu, H. Yuan, and H. Wu, Adv. Funct. Mater. 28 (2018).
I. G. Neizvestnyi, D. V. Ishchenko, I. O. Akhundov, S. P. Suprun, and O. E. Tereshchenko, Dokl. Phys. 65, 15 (2020).
G. Springholz, A. Y. Ueta, N. Frank, and G. Bauer, Appl. Phys. Lett. 69, 2822 (1996).
O. E. Tereshchenko, S. I. Chikichev, and A. S. Terekhov, J. Vac. Sci. Technol. A 17, 2655 (1999).
O. E. Tereshchenko, D. Paget, P. Chiaradia, J. E. Bonnet, F. Wiame, and A. Taleb-Ibrahimi, Appl. Phys. Lett. 82, 4280 (2003).
O. E. Tereshchenko, D. Paget, P. Chiaradia, E. Placidi, J. E. Bonnet, F. Wiame, and A. Taleb-Ibrahimi, Surf. Sci. 600, 3160 (2006).
O. E. Tereshchenko, Appl. Surf. Sci. 252, 7684 (2006).
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, and O. E. Tereshchenko, Semiconductors 53, 1182 (2019).
S. A. Dvoretsky, N. N. Mikhailov, D. G. Ikusov, V. A. Kartashev, A. V. Kolesnikov, I. V. Sabinina, Yu. G. Sidorov, and V. A. Shvets, in Methods for Film Synthesis and Coating Procedures, Ed. by L. Nanai, A. Samantara, S. Ratha, and L. Fabian (London, InTech, 2020), p. 49.
V. A. Shvets, N. N. Mikhailov, and S. A. Dvoretskii, Optoelectron., Instrum. Data Process. 47, 426 (2011).
A. J. Ricco, H. S. White, and M. S. Wrighton, J. Vac. Sci. Technol. A 2, 910 (1984).
S. S. Choi and G. Lucovsky, J. Vac. Sci. Technol. B 6, 1198 (1988).
Practical Surface Analysis by Auger- and X-ray Photoelectron Spectroscopy, Ed. by D. Briggs and M. P. Seah (Wiley, New York, 1983).
S. Schreyeck, K. Brunner, L. W. Molenkamp, G. Karczewski, M. Schmitt, P. Sessi, M. Vogt, S. Wilfert, A. B. Odobesko, and M. Bode, Phys. Rev. Mater. 3, 1 (2019).
M. V. Yakushev, D. V. Brunev, and Y. G. Sidorov, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 4, 64 (2010).
V. S. Varavin, S. A. Dvoretsky, V. I. Liberman, N. N. Mikhailov, and Y. G. Sidorov, J. Cryst. Growth 159, 1161 (1996).
V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. G. Remesnik, I. V. Sabinina, Yu. G. Sidorov, V. A. Shvets, M. V. Yakushev, and A. V. Latyshev, Optoelectron., Instrum. Data Process. 56, 456 (2020).
ACKNOWLEDGMENTS
The AFM measurements were performed using equipment of the Multiple-access center “Nanostructures”.
We thank V.G. Remesnik and V.S. Varavin for carrying out measurements to determine the composition and electrical parameters of CdHgTe HESs.
Funding
The part of the study concerned with the MBE growth of CdHgTe HESs and the ellipsometry measurements was supported by the Russian Foundation for Basic Research, project no. 18-29-20053. The part of the study concerned with the growth of PbSnTe films was supported by the Russian Foundation for Basic Research, project no. 20-32-90154. The part of the study concerned with the XPS measurements was supported by the Russian Foundation for Basic Research and Novosibirsk region, project no. 20-42-543015. The part of the study concerned with the AFM measurements was supported by the Russian Science Foundation, project no. 18-72-10063.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Additional information
Translated by E. Smorgonskaya
Rights and permissions
About this article
Cite this article
Tarasov, A.S., Mikhailov, N.N., Dvoretsky, S.A. et al. Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy. Semiconductors 55 (Suppl 1), S62–S66 (2021). https://doi.org/10.1134/S1063782621090220
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782621090220