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On the growth, structure, and surface morphology of epitaxial CdTe films

  • Surfaces, Interfaces, and Thin Films
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Abstract

The structure and surface morphology of epitaxial CdTe films grown on glassy substrates with and without compensation with an additional Te vapor source during growth are studied. The optimal conditions of the production of structurally perfect epitaxial films with a pure smooth surface with no inclusions of another phase (T so = 1000–1100 K, T su = 570–670 K) are determined. It is established that, on glassy substrates, the epitaxial films grow via the (111) plane of the face-centered cubic (fcc) lattice with the parameter a = 6.481 Å. By varying the temperature of the main and compensating sources, CdTe films with n- and p-type conductivity are produced.

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Authors and Affiliations

  1. Abdullayev Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Az-1143, Azerbaijan

    I. R. Nuriyev, A. M. Nazarov & R. M. Sadigov

  2. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, Az-1143, Azerbaijan

    M. A. Mehrabova

  3. Baku State University, Baku, Az-1143, Azerbaijan

    N. G. Hasanov

Authors
  1. I. R. Nuriyev
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  2. M. A. Mehrabova
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  3. A. M. Nazarov
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  4. R. M. Sadigov
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  5. N. G. Hasanov
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Corresponding author

Correspondence to M. A. Mehrabova.

Additional information

Original Russian Text © I.R. Nuriyev, M.A. Mehrabova, A.M. Nazarov, R.M. Sadigov, N.G. Hasanov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 1, pp. 36–39.

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Nuriyev, I.R., Mehrabova, M.A., Nazarov, A.M. et al. On the growth, structure, and surface morphology of epitaxial CdTe films. Semiconductors 51, 34–37 (2017). https://doi.org/10.1134/S1063782617010183

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  • DOI: https://doi.org/10.1134/S1063782617010183

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