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Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
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Abstract

Films of the composition Ba0.8Sr0.2TiO3 (BST 80/20) are synthesized on a silicon substrate by the method of the high-frequency sputtering of a polycrystalline target. The results of investigations of the film composition, the electrophysical properties of capacitor structures based on them, and the dependence of these properties on the material (Al, Cu, Ni, Cr) of the upper electrode are presented.

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Funding

This study was carried out within the framework of the state assignment and was partially supported by the Russian Foundation for Basic Research, project nos. 18-29-11029, 19-07-00271, and 19-29-03042.

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Authors and Affiliations

  1. Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, 141190, Fryazino, Moscow oblast, Russia

    M. S. Afanasiev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov & G. V. Chucheva

  2. National University of Science and Technology “MISiS“, 119049, Moscow, Russia

    D. A. Kiselev

Authors
  1. M. S. Afanasiev
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  2. D. A. Belorusov
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  3. D. A. Kiselev
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  4. A. A. Sivov
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  5. G. V. Chucheva
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Corresponding author

Correspondence to G. V. Chucheva.

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The authors declare that they have no conflicts of interest.

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Translated by V. Bukhanov

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Afanasiev, M.S., Belorusov, D.A., Kiselev, D.A. et al. Dependence of the Electrophysical Characteristics of Metal–Ferroelectric–Semiconductor Structures on the Field-Electrode Material. Semiconductors 54, 1445–1449 (2020). https://doi.org/10.1134/S1063782620110032

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  • DOI: https://doi.org/10.1134/S1063782620110032

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