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Creation and Investigation of Metal—Dielectric–Semiconductor Structures Based on Ferroelectric Films

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Abstract

The effect of the synthesis temperature on the microstructure and the electrophysical properties of metal–dielectric–semiconductor structures based on ferroelectric films of the composition Ba0.8Sr0.2TiO3 upon the formation of p-type silicon substrates with [100] orientation is studied. It was experimentally established that an increase in the synthesis temperature leads to an improvement in the dielectric and piezoelectric properties of ferroelectric films. The temperature stability and stability in the behavior of the capacitance–voltage characteristics of MIS structures on the number of switching cycles are shown.

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Funding

This work was carried out as part of a state assignment and was partially supported by the Russian Foundation for Basic Research (projects nos. 18-29-11029, 19-07-00271 and 19-29-03042). Investigations by methods of scanning probe microscopy were performed on the equipment of the Central Scientific and Practical Center “Materials Science and Metallurgy” of the National University of Science and Technology “MISIS.”

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Authors and Affiliations

  1. Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, Fryazino, Russia

    M. S. Afanas’ev, D. A. Kiselev, S. A. Levashov, A. A. Sivov & G. V. Chucheva

  2. National University of Science and Technology MISIS, Moscow, Russia

    D. A. Kiselev

Authors
  1. M. S. Afanas’ev
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  2. D. A. Kiselev
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  3. S. A. Levashov
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  4. A. A. Sivov
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  5. G. V. Chucheva
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Corresponding author

Correspondence to G. V. Chucheva.

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The authors declare that they have no conflicts of interest.

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Translated by N. Petrov

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Afanas’ev, M.S., Kiselev, D.A., Levashov, S.A. et al. Creation and Investigation of Metal—Dielectric–Semiconductor Structures Based on Ferroelectric Films. Phys. Solid State 62, 480–484 (2020). https://doi.org/10.1134/S1063783420030026

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  • DOI: https://doi.org/10.1134/S1063783420030026

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