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Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2|La2O3|HfO2 (HLH) Sandwich Gate Dielectrics

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Abstract

In this paper, the electrical properties of a double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) are investigated. To increase the ON-current and pixel intensity, and control the voltage stress bias, the conventional gate oxide material (silicon dioxide, SiO2) is replaced with a tri-high-k gate dielectric layer, hafnium dioxide (HfO2)/lanthanum oxide (La2O3)/hafnium dioxide (HfO2)—(HLH). Further, the performance of the proposed DG-DAL structure is compared with the single-active-layer (SAL) and dual-active-layer (DAL) TFTs. The amorphous indium-gallium zinc-oxide (a-IGZO) is considered as active layer for SAL channel region, and on the other hand, a-IGZO and indium-tin-oxide (ITO) are considered as active layers for DAL TFT and DG-DAL TFT channel regions. The parameters such as OFF-current, ON-current, ION/IOFF ratio, threshold voltage, mobility, average subthreshold swing, etc. are evaluated for the considered structures. It is observed that the DG-DAL TFT with HLH dielectric offers high ON-current of 3.85 × 10–3 A/μm, very low OFF-current of 2.53 × 10–17 A/μm, very high ION/IOFF ratio of 1.51 × 1014, threshold voltage of 0.642 V, high mobility of 35 cm2 v–1 s–1 and average subthreshold swing of 127.84 mV/dec. A commercial TCAD simulation tool ATLAS from SilvacoTM is used to investigate all the parameters for considered structures.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, NIT Calicut, 673601, Kozhikode, India

    L. Ramesh, S. Moparthi & G. K. Saramekala

  2. Department of Electrical Engineering, IIT Patna, 801103, Patna, India

    P. K. Tiwari

  3. Department of Electronics and Communication Engineering, Gayatri Vidya Parishad College of Engineering, 530048, Vishakapatnam, India

    V. R. Samoju

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  1. L. Ramesh
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Correspondence to G. K. Saramekala.

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The authors declare that they have no known competing financial interest or personal relationships that could have appeared to influence the work reported in this paper.

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Ramesh, L., Moparthi, S., Tiwari, P.K. et al. Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2|La2O3|HfO2 (HLH) Sandwich Gate Dielectrics. Semiconductors 54, 1290–1295 (2020). https://doi.org/10.1134/S1063782620100243

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