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Optical Properties and Critical Points of PbSe Nanostructured Thin Films

  • SURFACES, INTERFACES, AND THIN FILMS
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Abstract

The spectroscopic ellipsometry method is used to investigate the optical properties of PbSe nanostructured thin films formed by the chemical deposition method. Function d2ε/dω2 formed by numerical differentiation of experimental data of the dielectric function ε/ω is used for better structural resolution of the interband transitions and the determination of critical points. Theoretical fitting is performed using the “Graphical Analysis” program. The best fit is found for the two-dimensional (2D) shape of the critical point (m = 0) for the energy region E = 2–3 eV, and one critical point corresponding to Eg = 2.5 eV is determined. This value is attributed to the L4 → L6 transition of the Brillouin zone.

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Authors and Affiliations

  1. Institute of Natural Resources, Nakhchivan Branch, Azerbaijan National Academy of Sciences, Az-7000, Nakhchivan, Azerbaijan

    M. N. Huseynaliyev & S. N. Yasinova

  2. Institute of Physics, Azerbaijan Academy of Sciences, Az-1143, Baku, Azerbaijan

    D. N. Jalilli & S. I. Mekhtiyeva

Authors
  1. M. N. Huseynaliyev
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  2. S. N. Yasinova
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  3. D. N. Jalilli
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  4. S. I. Mekhtiyeva
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Correspondence to M. N. Huseynaliyev.

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Translated by N. Korovin

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Huseynaliyev, M.N., Yasinova, S.N., Jalilli, D.N. et al. Optical Properties and Critical Points of PbSe Nanostructured Thin Films. Semiconductors 54, 630–633 (2020). https://doi.org/10.1134/S106378262006007X

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  • DOI: https://doi.org/10.1134/S106378262006007X

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