Abstract—
The spatial distribution of impurity defect centers in Fe-doped chemical vapor deposited (CVD) ZnSe has been studied by two-photon confocal microscopy and scanning Fourier transform spectroscopy using an IR microscope. It has been shown that, as a result of doping with Fe, CVD ZnSe contains regions hundreds of microns in size that are parallel to the doping plane and differ in luminescence characteristics. The characteristics of these regions have been shown to correlate with the concentration of optically active Fe. Our results can be interpreted in terms of a model that assumes codiffusion of Fe and two types of impurity defect centers. We have pointed out that the data obtained in this study should be taken into account in interpreting results on the photoluminescence of semiconductors doped via thermal diffusion.
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ACKNOWLEDGMENTS
This study was supported by the Federal Agency for Scientific Organizations (agreement nos. 007-GZ/Ch3363/26 and 0024-2018-0010) and the Russian Foundation for Basic Research (grant no. 18-03-01009: Development of Mid-IR Composite Laser Materials with Ultimate Optical Properties Based on High-Purity CVD Iron- and Chromium-Doped Zinc Chalcogenides).
In our work, we used equipment at the Shared Research Facilities Center: Technology and Characterization Center for the Fabrication, Investigation, and Certification of Micro- and Nanostructures, Prokhorov General Physics Institute, Russian Academy of Sciences.
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Balabanov, S.S., Gavrishchuk, E.M., Gladilin, A.A. et al. Spatial Distribution of Impurity Defect Centers in Fe-Doped Polycrystalline Zinc Selenide. Inorg Mater 55, 423–431 (2019). https://doi.org/10.1134/S0020168519050017
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DOI: https://doi.org/10.1134/S0020168519050017