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Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
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Abstract

The nucleation of three-dimentional Ge islands formed on a pre-patterned Si substrate with an array of round pits is studied. It is found that the Ge islands nucleate within pits with pointed bottoms and along the perimeters of pits with flat bottoms. This effect is determined by the difference between the distributions of elastic strains at the Ge/Si interface for differently shaped pit bottoms. The results of the simulation of growth show that, in the case of pits with pointed bottoms, the most relaxed regions are at the centers of the pit bottoms and the nucleation of islands takes place just in these regions. At the same time, in the case of pits with flat bottoms, the most relaxed regions are shifted from the pit bottoms to the pit edges, resulting in the nucleation of islands along the pit perimeters.

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REFERENCES

  1. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, P. S. Kop’ev, Zh. I. Alferov, and D. Bimberg, Semiconductors 32, 343 (1998).

    Article  ADS  Google Scholar 

  2. A. I. Yakimov, A. V. Dvurechenskii, and A. I. Nikiforov, J. Nanoelectron. Optoelectron. 1, 119 (2006).

    Google Scholar 

  3. O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenski, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer, Semiconductors 34, 1229 (2000).

    Article  ADS  Google Scholar 

  4. J. Stangl, V. Holy, and G. Bauer, Rev. Mod. Phys. 76, 725 (2004).

    Article  ADS  Google Scholar 

  5. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).

    Article  ADS  Google Scholar 

  6. Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).

    Article  ADS  Google Scholar 

  7. A. Rastelli, H. V. Kanel, B. J. Spencer, and J. Tersoff, Phys. Rev. B 68, 115301 (2003).

    Article  ADS  Google Scholar 

  8. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Science (Washington, DC, U. S.) 279, 353 (1998).

    Article  ADS  Google Scholar 

  9. F. M. Ross, R. M. Tromp, and M. C. Reuter, Science (Washington, DC, U. S.) 286, 1931 (1999).

    Article  Google Scholar 

  10. M. Stoffel, A. Rastelli, J. Tersoff, T. Merdzhanova, and O. G. Schmidt, Phys. Rev. B 74, 155326 (2006).

    Article  ADS  Google Scholar 

  11. Z. Zhong and G. Bauer, Appl. Phys. Lett. 84, 1922 (2004).

    Article  ADS  Google Scholar 

  12. Z. Zhong, W. Schwinger, F. Schäffler, G. Bauer, G. Vastola, F. Montalenti, and L. Miglio, Phys. Rev. Lett. 98, 176102 (2007).

    Article  ADS  Google Scholar 

  13. F. Hackl, M. Grydlik, M. Brehm, H. Groiss, F. Schäffler, T. Fromherz, and G. Bauer, Nanotechnology 22, 165302 (2011).

    Article  ADS  Google Scholar 

  14. F. Pezzoli, M. Stoffel, T. Merdzhanova, A. Rastelli, and O. G. Schmidt, Nanoscale Res. Lett. 4, 1073 (2009).

    Article  ADS  Google Scholar 

  15. M. Grydlik, G. Langer, T. Fromherz, F. Schäffler, and M. Brehm, Nanotechnology 24, 105601 (2013).

    Article  ADS  Google Scholar 

  16. G. Vastola, M. Grydlik, M. Brehm, T. Fromherz, G. Bauer, F. Boioli, L. Miglio, and F. Montalenti, Phys. Rev. B 84, 155415 (2011).

    Article  ADS  Google Scholar 

  17. C. Dais, H. Solak, Y. Ekinci, E. Muller, H. Sigg, and D. Grützmacher, Surf. Sci. 601, 2787 (2007).

    Article  ADS  Google Scholar 

  18. Z. Zhong, O. Schmidt, and G. Bauer, Appl. Phys. Lett. 87, 133111 (2004).

    Article  ADS  Google Scholar 

  19. B. Yang, F. Liu, and M. Lagally, Phys. Rev. Lett. 92, 025502 (2004).

    Article  ADS  Google Scholar 

  20. H. Hu, H. Gao, and F. Liu, Phys. Rev. Lett. 109, 106103 (2012).

    Article  ADS  Google Scholar 

  21. J. Zhang, M. Stoffel, A. Rastelli, O. Schmidt, V. Jovanovic, L. Nanver, and G. Bauer, Appl. Phys. Lett. 91, 173115 (2007).

    Article  ADS  Google Scholar 

  22. M. Salvalaglio, R. Backofen, A. Voigt, and F. Montalenti, Nanoscale Res. Lett. 12, 554 (2017).

    Article  ADS  Google Scholar 

  23. Zh. Smagina, P. Novikov, V. Zinovyev, N. Stepina, A. Dvurechenskii, V. Armbrister, V. Seleznev, and P. Kuchinskaya, Phys. Status Solidi A 210, 1522 (2013).

    Article  ADS  Google Scholar 

  24. P. L. Novikov, A. V. Nenashev, S. A. Rudin, A. S. Polyakov, and A. V. Dvurechenskii, Nanotechnol. Russ. 10, 192 (2015).

    Article  Google Scholar 

  25. P. N. Keating, Phys. Rev. 145, 637 (1966).

    Article  ADS  Google Scholar 

  26. S. A. Rudin, V. A. Zinovyev, A. V. Nenashev, A. Yu. Polyakov, Zh. V. Smagina, and A. V. Dvurechenskii, Optoelectron. Instrum. Data Proc. 49, 461 (2013).

    Article  Google Scholar 

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ACKNOWLEDGMENTS

We thank V.A. Armbrister for growing Ge/Si structures by the MBE technique and B.I. Fomin for conducting plasma chemical etching. The work was funded by Russian Scientific Foundation (grant no. 14-12-00931 Π, nanostructures design, model development and simulation of epitaxy on patterned surface), State Program (no. 0306-2016-0015, heterostructures growth), RFBR (grant no. 16-38-00851-mol-a, electron-beam lithography).

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    S. A. Rudin, Zh. V. Smagina, V. A. Zinovyev, P. L. Novikov, A. V. Nenashev, E. E. Rodyakina & A. V. Dvurechenskii

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    P. L. Novikov, A. V. Nenashev, E. E. Rodyakina & A. V. Dvurechenskii

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  1. S. A. Rudin
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  2. Zh. V. Smagina
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  3. V. A. Zinovyev
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  4. P. L. Novikov
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  5. A. V. Nenashev
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  6. E. E. Rodyakina
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  7. A. V. Dvurechenskii
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Correspondence to S. A. Rudin.

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Translated by E. Smorgonskaya

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Rudin, S.A., Smagina, Z.V., Zinovyev, V.A. et al. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface. Semiconductors 52, 1457–1461 (2018). https://doi.org/10.1134/S1063782618110222

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