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Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
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Abstract

The plasma chemical etching of gallium arsenide in chloropentafluoroethane (C2F5Cl) inductively coupled plasma is for the first time performed taking into account surface passivation by products of reagent decomposition. The elemental composition of deposited layers, their density, and morphological properties are studied. It is established that the smoothest etching profile is implemented when using a large freon flow and low capacitive power. Etching anisotropy is retained in such a mode at a depth of 7 μm with an etching rate of 230 nm/min.

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ACKNOWLEDGMENTS

The plasma chemical etching of gallium arsenide and morphological and structural measurements were performed using the Common Research Center of the Institute for Physics of Microstructures of the Russian Academy of Sciences “Physics and Technology of Micro- and Nanostructures”.

This study is performed in the scope of the state order of the Institute for Physics of Microstructures of the Russian Academy of Sciences, theme no. 0035-2014-0205.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603087, Afonino, Nizhny Novgorod oblast, Russia

    A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov & V. I. Shashkin

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  1. A. I. Okhapkin
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  2. P. A. Yunin
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  3. M. N. Drozdov
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  4. S. A. Kraev
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  5. E. V. Skorokhodov
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  6. V. I. Shashkin
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Correspondence to A. I. Okhapkin.

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Translated by N. Korovin

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Okhapkin, A.I., Yunin, P.A., Drozdov, M.N. et al. Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma. Semiconductors 52, 1473–1476 (2018). https://doi.org/10.1134/S1063782618110180

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  • DOI: https://doi.org/10.1134/S1063782618110180

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