Abstract
Single-crystal n-Si(100) wafers are implanted with 64Zn+ ions with an energy of 50 keV and dose of 5 × 1016 cm–2. Then the samples are irradiated with 132Xe26+ ions with an energy of 167 MeV in the range of fluences from 1 × 1012 to 5 × 1014 cm–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 1014 cm–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.
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ACKNOWLEDGMENTS
The study was supported in part by the government of the Russian Federation, state program no. 14, project no. 0066-2018-0008.
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Translated by E. Smorgonskaya
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Privezentsev, V.V., Kulikauskas, V.S., Skuratov, V.A. et al. Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV. Semiconductors 53, 313–320 (2019). https://doi.org/10.1134/S1063782619030163
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DOI: https://doi.org/10.1134/S1063782619030163