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Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it

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Abstract

Variations in the tensoresistance, tensomagnetoresistance, and magnetotensoresistance are experimentally and theoretically studied in wide ranges of magnetic-field strengths, 0 kOe ≤ H ≤ 100 kOe, and mechanical stresses, 0 GPa ≤ X ≤ 0.7 GPa, at 77 K under conditions of nondegenerate statistics of the electron gas in n-Ge crystals with different crystallographic orientations.

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Author information

Authors and Affiliations

  1. Institute for Nuclear Research, National Academy of Sciences of Ukraine, 03680, Kyiv, Ukraine

    G. P. Gaidar

  2. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine

    P. I. Baranskii

Authors
  1. G. P. Gaidar
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  2. P. I. Baranskii
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Corresponding author

Correspondence to G. P. Gaidar.

Additional information

Original Russian Text © G.P. Gaidar, P.I. Baranskii, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 7, pp. 975–980.

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Gaidar, G.P., Baranskii, P.I. Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it. Semiconductors 51, 936–941 (2017). https://doi.org/10.1134/S1063782617070090

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  • DOI: https://doi.org/10.1134/S1063782617070090

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